? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c, r gs = 1m 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c (chip capability) 180 a i lrms lead current limit, rms 120 a i dm t c = 25 c, pulse width limited by t jm 450 a i a t c = 25 c90 a e as t c = 25 c 750 mj dv/dt i s i dm , v dd v dss , t j 175c 15 v/ns p d t c = 25 c 480 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g trencht2 tm hiperfet tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic rectifier ixfa180 n10t2 ixfp180 n10t2 v dss = 100v i d25 = 180a r ds(on) 6m ds100266a(09/10) g = gate d = drain s = source tab = drain to-263 aa (ixfa) g d s to-220ab (ixfp) d (tab) g s d (tab) symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 10 a t j = 150 c 750 a r ds(on) v gs = 10v, i d = 50a, notes 1, 2 6 m features z international standard packages z avalanche rated z 175c operating temperature z high current handling capability z fast intrinsic rectifier z low r ds(on) advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching applications preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXFA180N10T2 ixfp180n10t2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 50 88 s c iss 10.5 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 945 pf c rss 100 pf t d(on) 21 ns t r 37 ns t d(off) 34 ns t f 13 ns q g(on) 185 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 48 nc q gd 52 nc r thjc 0.31 c/w r thch to-220 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 180 a i sm repetitive, pulse width limited by t jm 720 a v sd i f = 100a, v gs = 0v, note 1 1.3 v t rr 66 ns i rm 5.8 a q rm 190 nc notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. on through-hole package, r ds(on) kelvin test contact location must be 5mm or less from the package body. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 2 (external) i f = 0.5 ? i d25 , v gs = 0v -di/dt = 100a/ s v r = 0.5 ? v dss ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain 3 - source to-220 outline to-263 outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2010 ixys corporation, all rights reserved IXFA180N10T2 ixfp180n10t2 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7v 5v 6v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 012345678 v ds - volts i d - amperes v gs = 15v 10v 8v 5v 6v 7v fig. 3. output characteristics @ t j = 150oc 0 20 40 60 80 100 120 140 160 180 0 0.5 1 1.5 2 2.5 3 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7 v 5 v 6 v fig. 4. r ds(on) normalized to i d = 90a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 180a i d = 90a fig. 5. r ds(on) normalized to i d = 90a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 40 80 120 160 200 240 280 320 360 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXFA180N10T2 ixfp180n10t2 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 180 200 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v gs - volts v ds = 50v i d = 90a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1000 110100 v ds - volts i d - amperes 25s 100s 1ms 10ms 100ms dc r ds(on) limit t c = 175oc t j = 25oc single pulse
? 2010 ixys corporation, all rights reserved IXFA180N10T2 ixfp180n10t2 fig. 14. resistive turn-on rise time vs. drain current 5 10 15 20 25 30 35 40 45 50 55 90 100 110 120 130 140 150 160 170 180 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 2 ? , v gs = 10v v ds = 50v fig. 15. resistive turn-on switching times vs. gate resistance 13 14 15 16 17 18 19 20 2 3 4 5 6 7 8 9 10 11 12 13 14 15 r g - ohms t r - nanoseconds 19 20 21 22 23 24 25 26 t d ( on ) - nanoseconds t r t d(on) - - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 90a, 180a fig. 16. resistive turn-off switching times vs. junction temperature 10 11 12 13 14 15 16 17 18 19 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 28 30 32 34 36 38 40 42 44 46 t d ( off ) - nanoseconds t f t d(off) - - - - - r g = 2 ? , v gs = 10v v ds = 50v i d = 90a i d = 180a fig. 17. resistive turn-off switching times vs. drain current 11 12 13 14 15 16 17 90 100 110 120 130 140 150 160 170 180 i d - amperes t f - nanoseconds 26 30 34 38 42 46 50 t d ( off ) - nanoseconds t f t d(off) - - - - - r g = 2 ? , v gs = 10v v ds = 50v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 0 5 10 15 20 25 30 35 40 45 50 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2 ? , v gs = 10v v ds = 50v i d = 45a i d = 90a fig. 18. resistive turn-off switching times vs. gate resistance 12 13 14 15 16 17 23456789101112131415 r g - ohms t f - nanoseconds 36 38 40 42 44 46 t d ( off ) - nanoseconds t f t d(off) - - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 180a, 90a
ixys reserves the right to change limits, test conditions, and dimensions. IXFA180N10T2 ixfp180n10t2 ixys ref: ixf_180n10t2 (6v)01-02-09 fig. 19. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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